Български транзистори

ГТ1323
  Ge, pnp, UCBmax = -32V, ICmax = 250mА, PCmax = 200mW, h21e = 60-150, fT = 1.7MHz

SFT125
  Ge, pnp, UCBmax = -24V, ICmax = 500mА, PCmax = 350W, h21e = 70, fT = 2MHz

ГТ7301
  Ge, pnp, UCBmax = -30V, ICmax = 3А, PCmax = 30W, h21e = 20-150, fT = 0.2MHz

2Т3167
2Т3513
  Si, npn, UCBmax = 45V, ICmax = 100mА, PCmax = 200mW, h21e = 100-460, fT = 150MHz
Si, npn, UCBmax = 25V, ICmax = 150mА, PCmax = 250mW, h21e > 1000, fT = 125MHz

2Т3502
  Si, npn, UCBmax = 20V, ICmax = 10mА, PCmax = 250mW, h21e = 20-150, fT = 125MHz

2Т6551
  Si, npn, UCBmax = 75V, ICmax = 500mА, PCmax = 800mW, h21e = 26-470, fT = 200MHz

2Т9135
2Т7236
  Si, npn, UCBmax = 45V, ICmax = 1А, PCmax = 8W, h21e = 40-250, fT = 150MHz
Si, pnp, UCBmax = -60V, ICmax = 2А, PCmax = 25W, h21e = 40-250, fT = 3MHz

2Т7536
  Si, pnp, UCBmax = -60V, ICmax =4А, PCmax = 40W, h21e = 90-250, fT = 8MHz

2Ф2062

Info
  Фототранзистор, UCBmax = 32V, If = 1-6,3mA; Iтъмно = 0,1μА; Pc = 300mW

подложка
  Керамични изолационни подложки за транзистори