| ГТ1323 |
|
| |
Ge, pnp, UCBmax = -32V,
ICmax = 250mА, PCmax = 200mW, h21e = 60-150, fT = 1.7MHz |
|
|
SFT125 |
|
| |
Ge, pnp, UCBmax =
-24V, ICmax = 500mА, PCmax =
350W, h21e = 70, fT = 2MHz |
|
| ГТ7301 |
|
| |
Ge, pnp, UCBmax =
-30V,
ICmax = 3А, PCmax =
30W, h21e = 20-150, fT = 0.2MHz |
|
2Т3167
2Т3513 |
|
| |
Si,
npn, UCBmax = 45V,
ICmax = 100mА, PCmax =
200mW, h21e = 100-460, fT = 150MHz
Si,
npn, UCBmax = 25V,
ICmax = 150mА, PCmax =
250mW, h21e > 1000, fT = 125MHz |
|
| 2Т3502 |
|
| |
Si,
npn, UCBmax = 20V,
ICmax = 10mА, PCmax =
250mW, h21e = 20-150, fT = 125MHz |
|
| 2Т6551 |
|
| |
Si,
npn, UCBmax = 75V,
ICmax = 500mА, PCmax =
800mW, h21e = 26-470, fT = 200MHz |
|
2Т9135
2Т7236 |
|
| |
Si,
npn, UCBmax = 45V,
ICmax = 1А, PCmax =
8W, h21e = 40-250, fT = 150MHz
Si,
pnp, UCBmax = -60V,
ICmax = 2А, PCmax =
25W, h21e = 40-250, fT = 3MHz |
|
| 2Т7536 |
|
| |
Si,
pnp, UCBmax = -60V,
ICmax =4А, PCmax =
40W, h21e = 90-250, fT = 8MHz |
|
2Ф2062
Info |
|
| |
Фототранзистор,
UCBmax
= 32V, If = 1-6,3mA;
Iтъмно = 0,1μА; Pc =
300mW |
|
| подложка |
|
| |
Керамични изолационни подложки
за транзистори |
